Samsung has officially acknowledged that its Galaxy S25 series will not feature its proprietary DRAM and storage components, marking a shift for the flagship line. Instead, the smartphones will use Micron’s LPDDR5X DRAM and UFS 4.0 storage chips, as confirmed through a statement from Micron and supported by Samsung’s smartphone division.

This development confirms earlier rumors about Samsung’s decision to source memory from an external supplier for the first time in its flagship smartphones. Micron’s LPDDR5X DRAM chips are produced using advanced 1β (1-beta) process technology, which enhances design optimizations and allows for reduced voltage levels. Such improvements are expected to contribute to better battery performance in the devices.

Historically, all previous Galaxy S and Galaxy Z models incorporated memory chips from Samsung Semiconductor, making this change.

Mark Montierth, corporate vice president and general manager of Micron’s Mobile Business Unit, remarked on the partnership, stating that Samsung is setting “a new standard for AI phones,” emphasizing the enhanced mobile experiences powered by Micron’s advanced memory and storage technology.

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